GaN electronics for high power, high temperature applications

Electrochemical Society Interface

Volumn 9, Issue 2, 2000, Pages 34-39

  Pearton, S J ^a   Ren, F ^b   Zhang, A P ^c   Dang, G ^d   Cao, X A ^e   Cho, H ^f   Abemathy, C R ^g   Han, J ^a   Baca, A G ^b   Monier, C ^c   Chang, P ^d   Shul, R J ^e   Zhang, L ^f   Van Hove, J M ^g   Chow, P P ^a   Klaassen, J J ^b   Polley, C J ^c   Wowchack, A M ^d   King, D J ^e   Chu, S N G ^f   Hong, M ^g   Polyakov, A Y ^a   Smirnov, N B ^b   Govorkov, A V ^c   Chyi, J I ^d   Lee, C M ^e   Nee, T E ^f   Chuo, C C ^g   Chi, G C ^a   Redwing, J M ^b   more..

^a UNIVERSITY OF FLORIDA   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c SVT ASSOCIATES   (United States)

^d LUCENT TECHNOLOGIES   (United States)

^e INSTITUTE OF RARE METALS   (Russian Federation)

^f NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^g PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BASE RESISTANCE; GALLIUM NITRIDE; HETEROEPITAXIAL LAYERS;

CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC RECTIFIERS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; PHOTONS; SCHOTTKY BARRIER DIODES; SUBSTRATES; TRANSCONDUCTANCE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 6744242015     PISSN: 10648208     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

1. S. Nakamura and G. Fasol, The Blue Laser Diode, Springer, Heidelberg (1997).
2. M. S. Shur and M. A. Khan, in GaN and Related Materials II, S. ]. Pearton, Editor, Gordon and Breach, New York (2000).
3. S. C. Binari, L. B. Rowland, VV. Kruppa, G. Keiner, K. Doverspike, and D. K. Gaskill, Electron. Lett., 30, 1248 (1994).
4. L. F. Eastman, K. G. Chu, J. Smart, and J. R. Shealy, Mater. Res. Soc. S}mp. Pwc., 512, 3 (1998).
5. S. T. Sheppard, K. Doverspike, W. L. Pribble, S. T. Allen, and J. W. Palmour, 56th Device Research Conference, Charlottesville, VA, June 1998.
6. Y.-F. Wu, B. J. Thibeault, B. P. Keller, S. Keller, S. P. DenBaars, and U. K. Mishra, Topical Workshop on Heterostructure Electronics, Kanagawa, Japan, Sept 1998.
7. L. Daumiller, L. Kirchner, M. Kamp, K. J. Eheliiig, L. Pond, C. E. Weitzel, and E. Kohn, 56th Device Research Conference, Charlottesville, CA, June 1998.