Lateral n-i-p junctions formed in an InSb quantum well by bevel etching

Semiconductor Science and Technology

Volumn 20, Issue 2, 2005, Pages 144-148

  Nash, G R ^a   Nash, K J ^a   Smith, S J ^b   Bartlett, C J ^a   Jefferson, J H ^a   Buckle, L ^a   Emeny, M T ^a   Buckle, P D ^a   Ashley, T ^a  

^a QINETIQ   (United Kingdom)

^b UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ETCHING; EVAPORATION; FREQUENCIES; PHOTONS; SEMICONDUCTING INDIUM; SEMICONDUCTOR JUNCTIONS; THERMAL EFFECTS;

BANDGAP CHANNEL; FABRICATION TECHNIQUES; SECONDARY ION MASS SPECTROMETRY (SIMS); TEMPERATURE RANGE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 13644274765     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/2/007     Document Type: Article

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