Chemical bevelling of GaAs-based structures

Materials Science and Engineering B

Volumn 47, Issue 2, 1997, Pages 127-130

  Srnanek, R ^b   Novotny, I ^b   Hotovy, I ^b   Gomati, M El ^a,b  

^a UNIVERSITY OF YORK   (United Kingdom)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

Chemical bevelling; Gallium arsenide; Optical interference microscopy

Indexed keywords

ETCHING; HYDROGEN PEROXIDE; OPTICAL MICROSCOPY; PHOSPHORIC ACID; SEMICONDUCTOR DEVICE STRUCTURES; WATER;

CHEMICAL BEVELLING; OPTICAL INTERFERENCE MICROSCOPY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0001055540     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00024-X     Document Type: Article

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