A Raman study of GaAsN, GaInAsN layers on bevelled samples

Materials Science and Engineering: B

Volumn 91-92, Issue , 2002, Pages 87-90

  Srnanek, R ^a   Vincze, A ^a   Kovac, J ^a   Gregora, I ^b   Mc Phail, D S ^c   Gottschalch, V ^d  

^a SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

^b INSTITUTE OF PHYSICS   (Czech Republic)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Bevelling; GaAsN; GaInAsN; Raman spectroscopy

Indexed keywords

ETCHING; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; X RAY DIFFRACTION ANALYSIS;

BEVELLED STRUCTURES; WET CHEMICAL ETCHING;

GALLIUM ALLOYS;

EID: 0037197461     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00979-5     Document Type: Conference Paper

References (14)