Determination of doping profiles on bevelled GaAs structures by Raman spectroscopy

Applied Surface Science

Volumn 177, Issue 1-2, 2001, Pages 139-145

  Srnanek, R ^a   Kinder, R ^a   Sciana, B ^b   Radziewicz, D ^b   McPhail, D S ^c   Littlewood, S D ^d   Novotny, I ^a  

^a INSTITUTE OF CHEMISTRY   (Slovakia)

^b UNIVERSITY OF WROC AW   (Poland)

^c IMPERIAL COLLEGE LONDON   (United Kingdom)

^d Cascade Scientific Ltd   (United Kingdom)

Author keywords

Bevelled structure; Carrier concentration; Doping concentration; ECV; Raman spectroscopy; SIMS

Indexed keywords

CARRIER CONCENTRATION; COMPUTATIONAL METHODS; ELECTROCHEMISTRY; LASER BEAM EFFECTS; MULTILAYERS; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING;

BEVELLED STRUCTURES; ELECTROCHEMICAL CAPACITANCE-VOLTAGE METHOD; MICRO-RAMAN SPECTRA;

HETEROJUNCTIONS;

EID: 0035370945     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00227-6     Document Type: Article

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