A computer controlled chemical bevel etching apparatus: Applications to Auger analysis of multi-layered structures

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 128-131

  El Gomati, M ^a   Gelsthorpe, A ^a   Srnanek, R ^b   Liday, J ^b   Vogrincic, P ^b   Kovac, J ^b  

^a UNIVERSITY OF YORK   (United Kingdom)

^b SLOVAK UNIVERSITY OF TECHNOLOGY   (Slovakia)

Author keywords

AES; AlGaAs; Chemical bevel; Computer controlled; GaAs

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPUTER CONTROL; ETCHING; HETEROJUNCTIONS; ION BOMBARDMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPUTTERING;

BRAGG DIFFRACTION; CHEMICAL BEVEL; ION SPUTTERING; MULTILAYERED STRUCTURES;

CHEMICAL REACTORS;

EID: 0032678405     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00747-8     Document Type: Article

References (9)

1. S. Hoffman, Surface and Interface Analysis 2 (1980) 148.
2. W.H. Gries, Surface and Interface Analysis 7 (1) (1985) 29.
3. J.F. Bresse, J. Appl. Phys. 59 (1986) 2027.
4. J.P. Wittgreffe, M.J. Yates, S.P. Perrin, P.C. Spurdens, J. Crystal Growth 130 (1993) 51.
5. R. Srnanek, I. Novotny, I. Hotovy, M.El. Gomati, Material Science Eng. B 47 (1997) 127.
6. C.M. Hsu, D.S. McPhail, Nucl. Instr. and Meth. in Phys. Res. B 101 (1995) 427.
7. A.M. Huber et al., Growth of compound semiconductors, SPIE 796 (1987) 182.
8. R. Srnanek, M.El. Gomati, I. Novotny, D. Pudis, J. Crystal Growth 179 (1997) 320.
9. S. Hoffman, Surface Interface Analysis 9 (1986) 3.