A light-emitting device using a lateral junction grown by molecular beam epitaxy on GaAs (311)A-oriented substrates

Applied Physics Letters

Volumn 72, Issue 7, 1998, Pages 818-820

  Vaccaro, Pablo O ^a   Ohnishi, Hajime ^a   Fujita, Kazuhisa ^a  

^a ADVANCED TELECOMMUNICATIONS RESEARCH INSTITUTE INTERNATIONAL   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000689718     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120903     Document Type: Article

References (11)

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