Lateral p-n junction in modulation doped AlGaAs/GaAs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2513-2515

  Kaestner, Bernd ^a   Hasko, David G ^a   Williams, David A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Electroluminescence; GaAs; Lateral p n junction; Light emitting device; Optoelectronic Integration

Indexed keywords

BANDWIDTH; COMPUTER SIMULATION; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MODULATION; OPTOELECTRONIC DEVICES; SEMICONDUCTOR JUNCTIONS;

LATERAL P-N JUNCTION; OPTOELECTRONIC INTEGRATION; UNDOPED CHANNELS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0013321666     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2513     Document Type: Article

References (11)

1. R. N. Simons: Optical Control of Microwave Devices (Boston, MA; Artech House, 1990) Chap. 4.
2. See, for example, D. L. Miller: Appl. Phys. Lett. 47 (1985) 1309.
3. N. Saito, F. Sato, K. Takizawa, J. Kusano, H. Okumura, T. Aida, T. Saiki and M. Ohtsu: Jpn. J. Appl. Phys. 36 (1997) L896.
4. M. Inai, T. Yamamoto, T. Takebe and T. Watanabe: Jpn. J. Appl. Phys. 32 (1993) L1718.
5. P. O. Vaccaro, H. Ohnishi and K. Fujita: Appl. Phys. Lett. 72 (1998) 818.
6. P. O. Vaccaro, H. Ohnishi and K. Fujita: Appl. Phys. Lett. 74 (1999) 3854.
7. P. O. Vaccaro and K. Fujita: IEEE J. Quantum Electron 36 (2000) 849.
8. C. Lombardi el al.: IEEE Trans, on CAD 7 (11) (1988) 1164.
9. P. A. Parikh, S. S. Shi, J. Ibettson, E. L. Hu and U. K. Mishra: Electr. Lett. 32 (1996) 1724.
10. K. Kamimura and Y. Sakai: Thin Solid Films 56 (1979) 215.
11. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York 1981).