Bevelling technique for low surface roughness based on CMP

Electronics Letters

Volumn 38, Issue 17, 2002, Pages 998-1000

  Ferguson, R S ^a   Fobelets, K ^a   Cohen, L F ^a   Pawlik, M ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL MECHANICAL POLISHING; LAPPING; OPTIMIZATION; PARTICLE SIZE ANALYSIS; SEMICONDUCTOR QUANTUM WELLS; SURFACE ROUGHNESS;

BEVELLING TECHNIQUE; MECHANICAL LAPPING;

HETEROJUNCTIONS;

EID: 0037102027     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20020654     Document Type: Article

References (11)

1. SIMS analysis of Al delta-doped GaAs test structures using chemical bevelling as a sample preparation technique
2. Determination of doping profiles on bevelled GaAs structures of raman spectroscopy
3. AES depth profiling of semiconducting epitaxial layers with thicknesses in the nanometer range using an ion beam bevelling technique
4. Qualification of spreading resistance probe operations. I
5. Kelvin probe force microscopy of bevelled semiconductors
6. Depth profiling on a sputtered bevel of sub-degree slope angle
7. Crater-edge profiling in interface analysis employing ion-beam etching and AES
8. High resolution SIMS analysis using a chemical bevelling technique
9. Modeling of chemical-mechanical polishing: A review
10. Optimised mechanical polishing procedures