Focused ion molecular-beam epitaxy - a novel approach to 3D device fabrication using simultaneous p- and n-type doping

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 12-16

  Sazio, P J A ^a   Vijendran, S ^a   Yu, W ^a   Beere, H E ^a   Jones, G A C ^a   Linfield, E H ^a   Ritchie, D A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

FOCUSED ION BEAM (FIB) TECHNOLOGY;

MOLECULAR BEAM EPITAXY;

EID: 0032630055     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01267-6     Document Type: Article

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