High-frequency single-electron transport in a quasi-one-dimensional GaAs channel induced by surface acoustic waves

Journal of Physics Condensed Matter

Volumn 8, Issue 38, 1996, Pages

  Shilton, J M ^a   Talyanskii, V I ^a   Pepper, M ^a   Ritchie, D A ^a   Frost, J E F ^a   Ford, C J B ^a   Smith, C G ^a   Jones, G A C ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC WAVE TRANSMISSION; ACOUSTIC WAVES; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; ELECTROSTATICS; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE WAVES;

ELECTRON ELECTRON INTERACTIONS; GATE VOLTAGE; MOTT HUBBARD GAP; MOTT INSULATOR; QUASI ONE DIMENSIONAL CHANNEL; SURFACE ACOUSTIC WAVES; TWO DIMENSIONAL ELECTRON GAS;

ACOUSTOELECTRIC EFFECTS;

EID: 0030230401     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/8/38/001     Document Type: Article

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