Investigation of 1.3-μm GaInNAs Vertical-Cavity Surface-Emitting Lasers (VCSELs) Using Temperature, High-Pressure, and Modeling Techniques

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 9, Issue 5, 2003, Pages 1202-1208

  Knowles, G ^a   Fehse, Robin ^a   Tomić, Stanko ^a   Sweeney, Stephen John ^a   Sale, T E ^a   Adams, Alfred R ^a   O'Reilly, Eoin P ^a,b   Steinle, G ^c   Riechert, H ^c  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b UNIVERSITY COLLEGE CORK   (Ireland)

^c INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Auger; GaInNAs; Model; Pressure; Temperature; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

CURRENT DENSITY; ENERGY GAP; MATHEMATICAL MODELS; PRESSURE EFFECTS; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; THERMAL EFFECTS;

AUGER; GAINNAS; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 1342324888     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2003.820913     Document Type: Conference Paper

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