Insights into carrier recombination processes in 1.3 μm GaInNAs-based semiconductor lasers attained using high pressure

Electronics Letters

Volumn 37, Issue 2, 2001, Pages 92-93

  Fehse, R ^a   Sweeney, S J ^a   Adams, A R ^a   O'Reilly, E P ^a   Egorov, A Y ^b   Riechert, H ^b   Illek, S ^b  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; HIGH PRESSURE EFFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CARRIER RECOMBINATION PROCESSES; GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTOR LASERS;

EID: 0035138792     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010049     Document Type: Article

References (9)

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2. GOKHALE, M.R., STUDENKOV, P.V., WEI, J., and FORREST, S.R.: 'Low-threshold current, high-efficiency 1.3μm wavelength aluminium-free InGaAsN-based quantum-well lasers', IEEE Photonics Technol. Lett., 2000, 12, pp. 131-133
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7. HADER, J., KOCH, S.W., MOLONEY, J.V., and O'REILLY, E.P.: 'Gain in 1.3μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers', Appl. Phys. Lett., 2000, 77, pp. 630-632
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