Room temperature low-threshold CW operation of 1.23 μm GaAsSb VCSELs on GaAs substrates

Electronics Letters

Volumn 36, Issue 7, 2000, Pages 637-638

  Yamada, M ^a   Anan, T ^a   Kurihara, K ^a   Nishi, K ^a   Tokutome, K ^a   Kamei, A ^a   Sugou, S ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS CASTING; CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; QUANTUM WELL LASERS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THRESHOLD VOLTAGE;

THRESHOLD CURRENT DENSITY; VERTICAL-CAVITY SURFACE-EMITTING LASERS (VCSEL);

DISTRIBUTED FEEDBACK LASERS;

EID: 0033871367     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000483     Document Type: Article

References (6)

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2. SATO, S., and SATOH, S.: '1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition', Electron. Lett., 1999, 35, pp. 1251-1252
3. HUFFAKER, D.L., PARK, G., ZOU, Z., SHCHEKIN, O.B., and DEPPE, D.G.: '1.3μm room-temperature GaAs-based quantum-dot laser', Appl. Phys. Lett., 1998, 73, pp. 2564-2566
4. ANAN, T., YAMADA, M., TOKUTOME, K., SUGOU, S., NISHI, K., and KAMEI, A.: 'Room-temperature pulsed operation of GaAsSb/GaAs vertical-cavity surface-emitting lasers', Electron. Lett., 1999, 35, pp. 903-904
5. YAMADA, M., ANAN, T., TOKUTOME, K., NISHI, K., GOMYO, A., and SUGOU, S.: 'Low-threshold lasing at 1.3μm from GaAsSb quantum wells directly grown on GaAs substrates'. Conf. Proc. LEOS '98, Orlando, 1998, Paper WA3, pp. 149-150
6. LIM, D.H., YANG, G.M., KIM, J.-H., LIM, K.Y., and LEE, H.J.: 'Sealing of AlAs against wet oxidation and its use in the fabrication of vertical-cavity surface-emitting lasers', Appl. Phys. Lett., 1997, 71, pp. 1915-1917