SCOPUS 정보 검색 플랫폼

Volumn 37, Issue 6, 2001, Pages 355-356

OC-48 capable InGaAsN vertical cavity lasers

(10) Jackson, A W a Naone, R L a Dalberth, M J a Smith, J M a Malone, K J a Kisker, D W a Klem, J F b Choauette, K P b Serkland, D K b Geib, K M b

a Oplink Communications Inc (United States)

b SANDIA NATIONAL LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; HIGH POWER LASERS; LASER MODES; LIGHT ABSORPTION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TEMPERATURE; TUNNEL JUNCTIONS;

ALUMINUM GALLIUM ARSENIDE; CURRENT INJECTION; DISTRIBUTED BRAGG REFLECTORS; INDIUM GALLIUM ARSENIDE NITRIDE; QUANTUM WELL VERTICAL CAVITY LASER;

QUANTUM WELL LASERS;

EID: 0035868165 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:20010232 Document Type: Article

Times cited : (93)

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