Cryogenic VCSEL's with chirped multiple quantum wells for a very wide temperature range of CW operation

IEEE Photonics Technology Letters

Volumn 8, Issue 11, 1996, Pages 1423-1425

  Ortiz, G G ^a,b,c   Hains, C P ^b   Lu, Bo ^b,d   Sun, S Z ^b   Cheng, Julian ^a,b   Zolper, J C ^e  

^a IEEE

^b UNIVERSITY OF NEW MEXICO   (United States)

^c CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^d SDL INC   (United States)

^e SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; CRYOGENIC EQUIPMENT; CURRENT DENSITY; OPTICAL LINKS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

VERTICAL CAVITY SURFACE EMITTING LASERS (VCSELS);

SEMICONDUCTOR LASERS;

EID: 0030283876     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.541537     Document Type: Article

References (7)

1. B. Lu, W.-L. Luo, C. Hains, J. Cheng, R. P. Schneider, K. D. Choquette, K. L. Lear, S. P. Kilcoyne, and J. C. Zolper, "High-efficiency, and high-power vertical-cavity surface-emitting lasers designed for cryogenic applications," IEEE Photon. Technol. Lett., vol. 7, no. 5, pp. 447-448, 1995.
2. G. Goncher, B. Lu, W.-L. Luo, J. Cheng, S. Hersee, S. Z. Sun, R. P. Schneider, and J. C. Zolper, "Cryogenic operation of AlGaAs-GaAs vertical-cavity surface-emitting lasers at temperatures from 200-6 K," IEEE Photon. Technol Lett., vol. 8, no. 3, pp. 316-318, 1996.
3. B. Lu, Y.-C. Lu, J. Cheng, R. P. Schneider, J. C. Zolper, and G. Goncher, "Gb/s cryogenic optical link using optimized low-temperature AlGaAs-GaAs vertical-cavity surface-emitting lasers," IEEE J. Quantum Electron., vol. 32, no. 8, Aug. 1996.
4. M. Kajita, T. Kawakami, M. Nido, A. Kimura, T. Yoshikawa, K. Kurihara, Y. Sugimoto, and K. Kasahara, "Temperature characteristics of a vertical-cavity surface-emitting laser with a broad-gain bandwidth," IEEE J. Select. Topics Quantum Electron., vol. 1, no. 2, pp. 654-660, June 1995.
5. J. S. Blakemore, "Semiconducting and other major properties of gallium arsenide," J. Appl. Phys., vol. 53, no. 10, pp. R123-R181, 1982.
6. W. G. Spitzer and J. M. Whelan, "Infrared absorption and electron effective mass in n-type gallium arsenide," Physical Rev., vol. 114, no. 1, pp. 59-63, 1959.
7. P. A. Evans, P. Blood, and J. S. Roberts, "Carrier distribution in quantum well lasers," Semiconduct. Sci. Technol., vol. 9, no. 9, pp. 1740-1743, 1994.