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Volumn 235, Issue 2, 2003, Pages 486-490

Quantifying pressure-dependent recombination currents in GaInNAs lasers using spontaneous emission measurements

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0037330205     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200301607     Document Type: Conference Paper
Times cited : (3)

References (14)
  • 2
    • 0001018290 scopus 로고    scopus 로고
    • High pressure in semiconductor physics II
    • edited by R.K. Willardson and E.R. Weber (Academic Press, London)
    • A.R. Adams, M. Silver, and J. Allam, High Pressure in Semiconductor Physics II, in: Semiconductors and Semimetals, Vol. 55, edited by R.K. Willardson and E.R. Weber (Academic Press, London, 1998).
    • (1998) Semiconductors and Semimetals , vol.55
    • Adams, A.R.1    Silver, M.2    Allam, J.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.