Room-temperature pulsed operation of 1.3μm vertical-cavity lasers including bottom InGaAsP/InP multilayer Bragg mirrors

Electronics Letters

Volumn 33, Issue 24, 1997, Pages 2048-2049

  Salet, P ^a   Gaborit, F ^a   Pagnod Rossiaux, Ph ^a   Plais, A ^a   Derouin, E ^a   Pasquier, J ^a   Jacquet, J ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

Semiconductor junction lasers; Vertical cavity surface emitting lasers

Indexed keywords

LASER PULSES; MIRRORS; MOLECULAR BEAM EPITAXY; OPTICAL MULTILAYERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE;

DIELECTRIC MIRRORS; MULTILAYER BRAGG MIRRORS; VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0031276424     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19971408     Document Type: Article

References (4)

1. STREUBEL, K., RAPP, S., ANDRÉ, J., and WALLIN, J.: 'Room-temperature pulsed operation of 1.5-μm vertical-cavity lasers with an InP-based Bragg reflector', IEEE Photonics Technol. Lett., 1996, 8, (9), pp. 1121-1123
2. FISHER, M.A., HUANG, Y.-Z., DANN, A.J., ELTON, D.J., HARLOW, M.J., PERRIN, S.D., REED, J., REID, I., and ADAMS, MJ.: 'Pulsed electrical operation of 1.5-μm vertical-cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1995, 7, (6), pp. 608-610
3. SALET, P., PAGNOD-ROSSIAUX, PH., GABORIT, F., PLAIS, A., and JACQUET, J.: 'Gas-source molecular-beam epitaxy and optical characterisation of highly-reflective InGaAsP/InP multilayer Bragg mirrors for 1.3μm vertical-cavity lasers', Electron. Lett., 1997, 33, (13), pp. 1145-1147
4. PLAIS, A., SALET, P., STARCK, CH., PINQUIER, A., DEROUIN, E., FORTIN, C., FILLION, T., JACQUET, J., and BRILLOUET, F.: 'Thermal behaviour of 1.3μm VCSELs'. 8th Int. Conf. on Indium Phosphide and Related Materials, Schwäbisch Gmünd, Germany, 22-25 April 1996