A comparison of the thermal stability of InGaAsP, AlGaInAs and GaInNAs quantum-well lasers for 1.3 μm operation

Conference Digest - IEEE International Semiconductor Laser Conference

Volumn , Issue , 2002, Pages 43-44

  Sweeney, S J ^a   Jin, S R ^a   Fehse, R ^a   Adams, A R ^a   Higashi, T ^b   Riechert, H ^c   Thijs, P J A ^d  

^a UNIVERSITY OF SURREY   (United Kingdom)

^b FUJITSU LABORATORIES LTD   (Japan)

^c INFINEON TECHNOLOGIES AG   (Germany)

^d Uniphase4 Netherlands BV   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; LIGHT EMISSION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

AUGER RECOMBINATION;

QUANTUM WELL LASERS;

EID: 0036452034     PISSN: 08999406     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. M. Kondow, T. Kitatani, S. Nakatsuka, M.C. Larson, K. Nakahara, Y. Yazawa, M. Okai, and K. Uomi, IEEE, Jour. Sel. Top. Quant. Electr. 3, 719 (1997).
2. A.F. Phillips, S.S. Sweeney, A.R. Adams, and P.J.A. Thijs, IEEE Jour. Sel. Top. Quant. Electr. 5, 401 (1999).