Effect of excimer laser annealing on the structural properties of silicon germanium films

Journal of Materials Research

Volumn 19, Issue 12, 2004, Pages 3503-3511

  Sedky, Sherif ^a   Schroeder, Jeremy ^b   Sands, Timothy ^b   King, Tsu Jae ^c   Howe, Roger T ^c  

^a The American University in Cairo   (Egypt)

^b PURDUE UNIVERSITY   (United States)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; CRYSTAL MICROSTRUCTURE; ELECTRIC RESISTANCE; EXCIMER LASERS; LASER BEAM EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; STRUCTURE (COMPOSITION); SURFACE ROUGHNESS; THERMAL EFFECTS;

EXCIMER LASER ANNEALING; SILICON GERMANIUM FILMS; STRUCTURAL PROPERTIES; THERMAL PENETRATION;

SEMICONDUCTING FILMS;

EID: 12844272315     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0450     Document Type: Article

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