A novel germanium doping method for fabrication of high-performance p-channel poly-Si1-xGex TFT by excimer laser crystallization

IEEE Electron Device Letters

Volumn 24, Issue 4, 2003, Pages 233-235

  Chang, Ting Kuo ^a   Chu, Fang Tsun ^a   Lin, Ching Wei ^a   Tseng, Chang Ho ^a   Cheng, Huang Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Excimer laser annealing; Ge doping; Poly Si1 xGex thin film transistor (TFT)

Indexed keywords

ANNEALING; CRYSTALLIZATION; EXCIMER LASERS; HOLE MOBILITY; ION IMPLANTATION; METALLIZING; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS;

EXCIMER LASER CYSTALLIZATION; GERMANIUM DOPING METHOD; POLY SILICON GERMANIUM THIN FILM TRANSISTORS;

SEMICONDUCTING GERMANIUM;

EID: 0038781386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2003.811423     Document Type: Letter

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