Characterization of excimer laser annealed polycrystalline Si1-xGex alloy thin films by x-ray diffraction and spectroscopic ellipsometry

Journal of Applied Physics

Volumn 83, Issue 1, 1998, Pages 174-180

  Yu, Guolin ^a   Krishna, Kalaga Murali ^a,b   Shao, Chunlin ^a   Umeno, Masayoshi ^a   Soga, Tetsuo ^a,c   Watanabe, Junji ^a   Jimbo, Takashi ^a,c  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

^b Res Ctr for Micro Struct Devices   (Japan)

^c Dept Environ Technol Urban Plan ^*

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELLIPSOMETRY; EXCIMER LASERS; SUBSTRATES; SURFACES; X RAY DIFFRACTION;

ION BEAM SPUTTERING; SPECTROSCOPIC ELLIPSOMETRY;

THIN FILMS;

EID: 0031672418     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366670     Document Type: Article

References (28)

1. S. Lombardo, A. Pinto, V. Raineri, P. Ward, G. La Rosa, G. Privitera, and S. U. Campisano, IEEE Electron Device Lett. 17, 485 (1996).
2. A. Slaoui, C. Deng, S. Talwar, J. K. Kramer, and T. W. Sigmon, Appl. Phys. A: Solids Surf. 59, 203 (1994).
3. I. Manna, L.-T. Jung, and S. Banerjee, IEEE Proceedings of the 53rd Annual Device Res. Conference Digest, 1995, p. 156.
4. E. A. Al-Nuaimy and J. M. Marshall, Appl. Phys. Lett. 69, 3857 (1996).
5. A. Slaoui, C. Deng, S. Talwar, J. K. Kramer, B. Prevot, and T. W. Sigmon, Mater. Res. Soc. Symp. Proc. 321, 689 (1994).
6. A. Slaoui, C. Deng, S. Talwar, J. K. Kramer, T. W. Sigmon, J. P. Stoquert, and B. Prevot, Appl. Surf. Sci. 86, 346 (1995).
7. X. Zhang, Z. Chen, D. Cui, G. Yang, and R. Wang, Appl. Phys. Lett. 69, 3164 (1996).
8. D. Labrie, G. C. Aers, H. Lafontaine, R. L. Williams, S. Charbonneau, R. D. Goldberg, and I. V. Mitchell, Appl. Phys. Lett. 69, 3866 (1996).
9. S. F. Nelson and T. N. Jackson, Appl. Phys. Lett. 69, 3563 (1996).
10. J. Humlicek, M. Garriga, M. I. Alonso, and M. Cardona, J. Appl. Phys. 65, 2827 (1989).
11. N. V. Nguyen, K. Vedam, and J. Narayan, J. Appl. Phys. 67, 599 (1990).
12. R. T. Carline, C. Pickering, D. J. Robbins, W. Y. Leong, A. D. Pitt, and A. G. Cullis, Appl. Phys. Lett. 64, 1114 (1994).
13. C. Pickering, R. T. Carline, D. J. Robbins, W. Y. Leong, S. J. Barnett, A. D. Pitt, and A. G. Cullis, J. Appl. Phys. 73, 239 (1993).
14. P. G. Snyder, J. A. Woolam, S. A. Alterovitz, and B. Johs, J. Appl. Phys. 68, 5925 (1990).
15. R. Bisaro, J. Magarino, N. Proust, and K. Zellama, J. Appl. Phys. 59, 1167 (1986).
16. F. R. L. Schoening, J. Van Nickerk, and R. A. W. Haul, Proc. Phys. Soc. London, Sect. B 65, 528 (1952).
17. H. P. Klug and L. E. Alexander, in X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials (Wiley, New York, 1954), Chap. 9, p. 491.
18. E. L. Mathe', J. G. Maillou, A. Naudon, E. Fogarassy, M. Elliq, and S. De Unamuno, Appl. Surf. Sci. 43, 142 (1989).
19. Y. Mishima, M. Takei, T. Uematsu, N. Matsumoto, T. Kakehi, U. Wakino, and M. Okabe, J. Appl. Phys. 78, 217 (1995).
20. J. Narayan and C. W. White, Appl. Phys. Lett. 44, 35 (1984).
21. Y. Morita and T. Noguchi, Jpn. J. Appl. Phys. Part 2 28, L309 (1989).
22. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
23. D. E. Aspnes, A. A. Studna, and E. Kinsbron, Phys. Rev. B 29, 768 (1984).
24. S. Boultadakis, S. Logothetidis, and S. Ves, J. Appl. Phys. 72, 3648 (1992).
25. B. D. Cullity, in Elements of X-ray Diffraction (Addison-Wesley, Reading, MA, 1967), Chap. 9, p. 264.
26. S. Ghosh, A. Dasgupta, and S. Ray, J. Appl. Phys. 78, 3200 (1995).
27. E. C. Freeman and W. Paul, Phys. Rev. B 20, 716 (1979).
28. A.-M. Dutron, E. Blanquet, N. Bourhila, R. Madar, and C. Bernard, Thin Solid Films 259, 25 (1995).