Laser-induced integrated processing for heteroepitaxial SixGe(1-x) alloys

Applied Surface Science

Volumn 102, Issue , 1996, Pages 42-46

  Chiussi, S ^a   Gonzalez P ^a   Leon B ^a   Larciprete, R ^b   Willmott, P ^c   Martelli, S ^b   Cesile, C ^b   Borsella, E ^b  

^a UNIVERSITY OF VIGO   (Spain)

^b ENEA   (Italy)

^c UNIVERSITY OF ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; EPITAXIAL GROWTH; EXCIMER LASERS; PULSED LASER APPLICATIONS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR SUPERLATTICES; SILICON ALLOYS; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS HYDROGENATED GERMANIUM THIN FILMS; HETEROEPITAXIAL ALLOYS; LASER INDUCED CHEMICAL VAPOR DEPOSITION (LCVD); PROFILOMETRY; PULSED LASER INDUCED EPITAXY (PLIE);

SEMICONDUCTING FILMS;

EID: 0030564809     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00016-5     Document Type: Article

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