Athermal annealing of ion-implanted silicon

9th International Conference on Advanced Thermal Processing of Semiconductors, RTP 2001

Volumn , Issue , 2001, Pages 133-144

  Donnelly, D W ^a   Covington, B C ^a   Grun, J ^b   Fischer, R P ^b   Peckerar, M ^b   Felix, C L ^c   Djordjevic, B B ^d   Mignogna, R ^b   Meyer, J R ^b   Ting, A ^b   Manka, C K ^e  

^a TEXAS STATE UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c Unified Industries Inc   (United States)

^d JOHNS HOPKINS UNIVERSITY   (United States)

^e RESEARCH SUPPORT INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOPING (ADDITIVES); HEAT TREATMENT;

ION-IMPLANTED SILICON; LESS-DIFFUSION; NEUTRON TRANSMUTATION-DOPED; PULSED LASER ANNEALING; THERMAL METHODS; THERMAL-ANNEALING;

ION IMPLANTATION;

EID: 84983190413     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2001.1013757     Document Type: Conference Paper

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