SCOPUS 정보 검색 플랫폼

Volumn 17, Issue 7, 2002, Pages 1580-1586

Characterization of reduced-pressure chemical vapor deposition polycrystalline silicon germanium deposited at temperatures ≤550 °C

(5) Sedky, Sherif a Witvrouw, Ann a Caymax, Matty a Saerens, Annelies a Houtte, Paul Van a

a CAIRO UNIVERSITY (Egypt)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; PRESSURE EFFECTS; SEMICONDUCTING FILMS; SEMICONDUCTING GERMANIUM; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY SPECTROSCOPY;

DEPOSITION PRESSURE; DEPOSITION TEMPERATURE;

POLYSILICON;

EID: 0036648243 PISSN: 08842914 EISSN: None Source Type: Journal
DOI: 10.1557/JMR.2002.0235 Document Type: Article

Times cited : (8)

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