High-performance poly-Si TFTs made by Ni-mediated crystallization through low-shot laser annealing

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 22-24

  Yoon, Soo Young ^a   Young, Nigel ^a   Van Der Zaag, P J ^a   McCulloch, David ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

Crystallization; Laser annealing; Low temperature polysilicon (LTPS); Metal induced crystallization; Thin film transistor

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; ELECTRIC POTENTIAL; EXCIMER LASERS; ION IMPLANTATION; LASER APPLICATIONS; LEAKAGE CURRENTS; NICKEL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYCRYSTALLINE MATERIALS; POLYSILICON;

DRAIN VOLTAGE; FIELD EFFECT MOBILITY; LASER ANNEALING; LASER ENERGY DENSITY; LOW TEMPERATURE POLYSILICON; METAL INDUCED CRYSTALLIZATION; POLYCRYSTALLINE SILICON;

THIN FILM TRANSISTORS;

EID: 0037247670     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807019     Document Type: Letter

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