Electrochemical growth of copper on well-defined n-Si(1 1 1):H surfaces

Surface Science

Volumn 576, Issue 1-3, 2005, Pages 19-28

  Reitzle, A ^a   Renner, F U ^b   Lee, T L ^b   Zegenhagen, J ^b   Kolb, D M ^a  

^a UNIVERSITY OF ULM   (Germany)

^b EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Atomic force microscopy; Copper; Electrochemical methods; Growth; Low index single crystal surfaces; Scanning tunneling microscopy; Silicon; X ray scattering, diffraction, and reflection

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTROCHEMISTRY; EPITAXIAL GROWTH; GROWTH (MATERIALS); SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SILICON; SINGLE CRYSTALS; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

ELECTROCHEMICAL METHODS; GROWTH; LOW INDEX SINGLE CRYSTAL SURFACES; X-RAY BEAMS;

COPPER;

EID: 12544254106     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.11.038     Document Type: Article

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