Characterization of high oxygen:Tetraethylorthosilicate ratio plasma-enhanced chemical vapor deposited films

Journal of the Electrochemical Society

Volumn 143, Issue 3, 1996, Pages 1079-1084

  DeCrosta, D A ^a   Hackenberg, J J ^a   Linn, J H ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; CHEMICAL VAPOR DEPOSITION; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GLASS; OXYGEN; PLASMA APPLICATIONS; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; STRESSES; SUBSTRATES; THIN FILMS;

FILM NONUNIFORMITY; PHOSPHORUS DOPED SILICON GLASS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; TETRAETHYLORTHOSILICATE; UNDOPED SILICON GLASS;

SILICATES;

EID: 0030108111     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836586     Document Type: Article

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