4H-SiC (112̄0) epitaxial growth

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Kimoto, T ^a   Yamamoto, T ^a   Chen, Z Y ^a   Yano, H ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRON TRAPS; EPITAXIAL GROWTH; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTOR DOPING; SUBSTRATES; SURFACE ROUGHNESS; X RAY CRYSTALLOGRAPHY;

EPILAYERS; HOMOEPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 0033685914     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

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