Oreduction of interface trap density in 4H-SiC MOS by high-temperature oxidation

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 989-992

  Okuno, Eiichi ^a   Amano, Shinji ^a  

^a DENSO CORPORATION   (Japan)

Author keywords

4H SiC; High temperature oxidation; Interface trap density

Indexed keywords

THERMOOXIDATION; CARBON; HIGH TEMPERATURE OPERATIONS; INTERFACES (MATERIALS); MOSFET DEVICES; OXIDATION; SILICON CARBIDE;

4H-SIC; HIGH TEMPERATURE; INTERFACE TRAP DENSITY; MOS INTERFACE; RESIDUAL CARBON; SI-CMOS;

SILICON CARBIDE; MOS DEVICES;

EID: 0036433908     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.989     Document Type: Conference Paper

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