Comparison of 1kV Lateral RESURF MOSFETs in 4H-SiC and 6H-SiC

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 757-760

  Banerjee, S ^a   Chow, T P ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

4H SiC; 6H SiC; MOSFET; RESURF

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; FABRICATION; SILICON; SILICON CARBIDE;

HIGH SURFACE FIELDS;

MOSFET DEVICES;

EID: 0242413258     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.757     Document Type: Conference Paper

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