475-V high-voltage 6H-SiC lateral MOSFET

IEEE Electron Device Letters

Volumn 20, Issue 8, 1999, Pages 431-433

  Saks, N S ^a   Mani, S S ^b   Agarwal, A K ^b   Ancona, M G ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SILICON WAFERS;

ELECTRON INVERSION LAYER MOBILITY; IMPLANTED DRIFT LAYER RESISTANCE; SPECIFIC ON-RESISTANCE;

MOSFET DEVICES;

EID: 0032635626     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.778167     Document Type: Article

References (16)

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