An ultra-low Rons in 4H-SiC vertical MOSFET: Buried channel double-epitaxial MOSFET

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 313-316

  Harada, Shinsuke ^a   Okamoto, Mitsuo ^a   Yatsuo, Tsutomu ^a   Adachi, Kazuhiro ^a   Fukuda, Kenji ^a   Arai, Kazuo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC POTENTIAL; EPITAXIAL GROWTH; INTERFACES (MATERIALS); ION IMPLANTATION;

HIGH POWER UNIPOLAR SWITCHING DEVICES; HIGH TEMPERATURE ACTIVATION ANNEALING; JUNCTION TERMINATION EXTENSION (JTE) STRUCTURES;

MOSFET DEVICES;

EID: 5044233276     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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2. D. Peters, R. Schöner, P. Friedrichs and D. Stephani, "4H-SiC Power MOSFET Blocking 1200V with a Gate Technology Compatible with Industrial Applications," Mat. Sci. Forum, vols. 433-436 (2003), pp. 769-772.
3. M. K. Das, G. Y. Chung, J. R. Williams, N. S. Saks, L. A. Lipkin and J. W. Palmour, "High-Current NO-Annealed Lateral 4H-SiC MOSFETs," Mat. Sci. Forum, vols. 389-393, pp. 981-984, 2002.
4. R. Schörner, P. Friedrichs and D. Peters, "Detailed Investigation of N-Channel Enhancement 6H-SiC MOSFETs," IEEE Trans. Electron Devices, vol. 46, pp. 533-541, March 1999.
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6. R. Schömer, P. Friedrichs, D. Peters and D. Stephani, "Significantly Improved Performance of MOSFET's on Silicon Carbide Using the 15R-SiC Polytype," IEEE Electron Device Lett., vol. 20, pp. 241-244, May 1999.
7. S. Suzuki, S. Harada, R. Kosugi, J. Senzaki, W. J. Cho and K. Fukuda, "Correlation between Channel Mobility and Shallow Interface Traps in SiC Metal-Oxide-Semiconductor Field-Effect Transistor," J. Appl. Phys., vol. 92, pp. 6230-6234, Nov 2002.
8. S. Harada, S. Suzuki, J. Senzaki, R. Kosugi, K. Adachi, K. Fukuda and K. Arai, "High Channel Mobility hi Normally-Off 4H-SiC Buried Channel MOSFETs," IEEE Electron Device Lett., vol. 22, pp. 272-274, June 2001.