Atomic-scale analysis of fundamental mechanisms of surface valley filling during plasma deposition of amorphous silicon thin films

Surface Science

Volumn 574, Issue 2-3, 2005, Pages 123-143

  Valipa, Mayur S ^a,b   Sriraman, Saravanapriyan ^b   Aydil, Eray S ^b   Maroudas, Dimitrios ^a  

^a University of Massachusetts   (United States)

^b University of California   (United States)

Author keywords

Amorphous thin films; Hydrogen atom; Molecular dynamics; Plasma processing; Silicon; Surface diffusion; Surface structure, morphology, roughness, and topography

Indexed keywords

DANGLING BONDS (DB); GROWTH SURFACE; HYDROGEN ATOM; MOLECULAR DYNAMICS (MD) SIMULATION; PLASMA PROCESSING; TENSILE STRAIN BANDS;

ABSORPTION; CHEMICAL BONDS; COMPUTER SIMULATION; FILM GROWTH; MOLECULAR DYNAMICS; MORPHOLOGY; SILICON; SURFACE ROUGHNESS; SURFACE STRUCTURE; TENSILE STRENGTH;

THIN FILMS;

EID: 11444267809     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.10.039     Document Type: Article

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