Mechanism and activation energy barrier for H abstraction by H(D) from a-Si:H surfaces

Surface Science

Volumn 515, Issue 1, 2002, Pages

  Agarwal, Sumit ^a   Sriraman, Saravanapriyan ^a   Takano, Akihiro ^a,b   Van de Sanden, M C M ^c   Aydil, Eray S ^a   Maroudas, Dimitrios ^a  

^a University of California   (United States)

^b FUJI ELECTRIC CO   (Japan)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Amorphous surfaces; Hydrogen atom; Infrared absorption spectroscopy; Molecular dynamics; Plasma processing; Semiconductor semiconductor thin film structures; Silicon; Surface chemical reaction

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; COMPUTER SIMULATION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MOLECULAR DYNAMICS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

AMORPHOUS SURFACES;

SURFACE PROPERTIES;

EID: 0036682882     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(02)01879-4     Document Type: Article

References (30)