Visualizing the evolution of surface bond straining during radical-surface interactions in plasma deposition processes

IEEE Transactions on Plasma Science

Volumn 30, Issue 1 I, 2002, Pages 112-113

  Sriraman, Saravanapriyan ^a   Aydil, Eray S ^a   Maroudas, Dimitrios ^a  

^a University of California   (United States)

Author keywords

Amorphous silicon; Bond strain; Molecular dynamics; Plasma CVD; Radical surface interactions; Silane; Surface relaxation

Indexed keywords

AMORPHOUS FILMS; BOND STRENGTH (CHEMICAL); DIMERS; FILM GROWTH; HYDROGENATION; MOLECULAR DYNAMICS; PLASMA SIMULATION; RELAXATION PROCESSES; SEMICONDUCTING SILICON; STRAIN; SURFACE TREATMENT; THIN FILMS;

SURFACE BOND STRAINING; SURFACE RELAXATIONS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0036478149     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2002.1003949     Document Type: Article

References (4)

1. 3 radicals with silicon surfaces
2. 3 radicals into strained Si-Si surface bonds during plasma deposition of hydrogenated amorphous silicon films
3. 3 on the hydrogen-terminated Si(001)-(2 × 1) surface
4. Evolution of structure, morphology, and reactivity of hydrogenated amorphous silicon film surfaces grown by molecular-dynamics simulation