In situ ellipsometric studies of the a-Si:H growth using an expanding thermal plasma

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 281-284

  Smets, A H M ^a   Van De Sanden, M C M ^a   Schram, D C ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Amorphous material; Ellipsometry; Growth mechanism; Surface roughness

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DEPOSITION; ELLIPSOMETRY; FILM GROWTH; HYDROGENATION; MATHEMATICAL MODELS; PLASMA APPLICATIONS; SUBSTRATES; SURFACE ROUGHNESS; THERMAL EFFECTS;

OPTICAL MODEL;

AMORPHOUS FILMS;

EID: 0032648675     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01575-2     Document Type: Article

References (5)

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2. R.M.A. Azzam, N.M. Bashara, Ellipsometry and Polarized Light, North-Holland, Amsterdam, 1977.
3. G.E. Jellison Jr., H.H. Burke, J. Appl. Phys. 60 (2) (1986) 841.
4. D.A.G. Bruggeman, Ann. Phys 24 (1935) 636.
5. M.C.M. van de Sanden, R.J. Severens, W.M.M. Kessels, F. van de Pas, L. van IJzendoorn, D.C. Schram, Mater. Res. Soc. Symp. Proc. 467 (1997) MRS621.