Molecular-dynamics simulations of hydrogenated amorphous silicon thin-film growth

Materials Research Society Symposium - Proceedings

Volumn 408, Issue , 1996, Pages 445-450

  Ohira, T ^a   Ukai, O ^a   Noda, M ^a   Takeuchi, Y ^a   Murata, M ^a   Yoshida, H ^a  

^a MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; FILM GROWTH; HYDROGEN; HYDROGENATION; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; RADIATION; SILANES; THIN FILMS;

DEFECT RATIOS; HYDROGEN CONTENTS; HYDROGENATED AMORPHOUS SILICON THIN FILM; MOLECULAR DYNAMICS SIMULATION; RADICAL ENERGIZATION; RADICAL MIGRATION DISTANCE;

AMORPHOUS SILICON;

EID: 0030316156     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)