High-Power InAlGaAs/GaAs and AlGaAs/GaAs Semiconductor Laser Arrays Emitting at 808 nm

IEEE Photonics Technology Letters

Volumn 16, Issue 2, 2004, Pages 389-391

  Qu, Yi ^a   Yuan, Shu ^a   Liu, Chong Yang ^a   Bo, Baoxue ^b   Liu, Guojun ^b   Jiang, Huilin ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

High power; Laser array; Lasers; Reliability

Indexed keywords

INJECTION CURRENTS; SEMICONDUCTOR LASER ARRAYS;

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

SEMICONDUCTOR LASERS;

EID: 1442288559     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2003.822247     Document Type: Article

References (10)

1. H. Kan and T. Kanzaki, "High-power 2-D laser diode arrays for pumping solid state lasers," Proc. SPIE, vol. 3264, pp. 18-20, 1998.
2. F. Bachmann, "Industrial applications of high power diode lasers in materials processing," Appl. Surf. Sci., vol. 208-209, pp. 125-136, 2003.
3. M. A. Emanuel, J. A. Skidmore, M. Jansen, and R. Nabiev, "High-power InAlGaAs-GaAs laser diode emitting near 731 nm," IEEE Photon. Technol. Lett., vol. 9, pp. 451-1453, Nov. 1997.
4. R. G. Waters, R. J. Dalby, J. A. Baumann, J. L. De Sanctis, and A. H. Shepard, "Dark-line-resistant diode laser at 0.8 μm comprising InAlGaAs strained quantum well," IEEE Photon. Technol. Lett., vol. 3, pp. 409-411, May 1991.
5. S. L. Yellen, R. G. Waters, A. H. Shepard, J. A. Baumann, and R. J. Dalby, "Reliability of InAlGaAs strained quantum-well lasers operating at 0.81 μm" IEEE Photon. Technol. Lett., vol. 4, pp. 829-831, Aug. 1992.
6. A. H. Moore, N. Holehouse, S. R. Lee, and R. F. Murison, "The performance and reliability of 800-880 nm InAlGaAs/AlGaAs and InGaAs/AlGaAs strained layer ridge waveguide lasers," J. Cryst. Growth, vol. 124, pp. 703-708, 1992.
7. C. Frigeri, M. Baeumler, A. Migliori, S. Muller, J. L. Weyher, and W. Jantz, "Optical and structural analysis of degraded high power InGaAlAs/AlGaAs lasers," Mat. Sci. Eng., vol. B66, pp. 209-214, 1999.
8. E. W. Kreutz, N. Wiedmann, J. Jandeleit, D. Hoffmann, P. Loosen, and R. Poprawe, "Reliability and degradation mechanisms of InGa(Al)As/GaAs DQW high-power diode lasers," J. Cryst. Growth, vol. 210, pp. 313-317, 2000.
9. J. Chyi I. J. H. Gau, J. W. Pan, Y. J. Chan, J. W. Hong, and M. F. Huang, "Low threshold InAlGaAs/AlGaAs strained quantum well lasers grown by molecular beam epitaxy," Solid-State Electron., vol. 38, pp. 1105-1106, 1995.
10. H. K. Choi, C. A. Wang, D. F. Kolesar, R. L. Aggarwal, and J. N. Walpole, "High-power, high-temperature operation of AlInGaAs-Al-GaAs strained single-quantum-well diode lasers," IEEE Photon. Technol. Lett., vol. 3, pp. 857-859, Oct. 1991.