Improved photoluminescence of InGaAsN-(In)GaAsP quantum well by organometallic vapor phase epitaxy using growth pause annealing

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3008-3010

  Tansu, Nelson ^a   Yeh, Jeng Ya ^a   Mawst, Luke J ^a  

^a UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS;

AUGER RECOMBINATION PROCESSES;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0037851987     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1572470     Document Type: Article

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