Temperature-dependent photoluminescence of GaInP/AlGaInP multiple quantum well laser structure grown by metalorganic chemical vapor deposition with tertiarybutylarsine and tertiarybutylphosphine

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 2962-2967

  Liu, C Y ^a   Yuan, Shu ^a   Dong, J R ^b   Chua, S J ^b   Chan, M C Y ^c   Wang, S Z ^d  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c UNIVERSITY OF HONG KONG   (Hong Kong)

^d NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; APPROXIMATION THEORY; CHARGE CARRIERS; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; X RAY DIFFRACTION ANALYSIS;

NONRADIATIVE RECOMBINATION;

QUANTUM WELL LASERS;

EID: 0141522825     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597977     Document Type: Article

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