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Thin Solid Films

Volumn 308-309, Issue 1-4, 1997, Pages 507-511

Deposition of stable, low κ and high deposition rate SiF4-doped TEOS fluorinated silicon dioxide (SiOF) films

(3) Bhan, Mohan K a Huang, Judy a Cheung, David a

a APPLIED MATERIALS INC (United States)

Author keywords

Fluorine doped silicon dioxide films; Intermetal dielectric; Stable films

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); FLUORINE; PERMITTIVITY; PLASMA APPLICATIONS; SILICA; THERMODYNAMIC STABILITY;

FLUORINATED SILICON DIOXIDE FILMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION (PECVD); TETRAETHOXYSILANE;

DIELECTRIC FILMS;

EID: 0031249742 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(97)00478-1 Document Type: Article

Times cited : (43)

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