Effects of stress annealing in nitrogen on the effective contact-potential difference, charges, and traps at the Si/SiO 2 interface of metal-oxide-semiconductor devices

Journal of Applied Physics

Volumn 92, Issue 4, 2002, Pages 2198-2201

  Przewlocki, Henryk M ^a   Massoud, Hisham Z ^b  

^a ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ANNEALING TIME; EFFECTIVE OXIDE CHARGE; HIGH TEMPERATURE STRESS; INDEX OF REFRACTION; METAL OXIDE SEMICONDUCTOR; MID-GAP INTERFACES; MODEL DESCRIPTION; OXIDE STRESS; OXIDE THICKNESS; STRESS-ANNEALING;

ANNEALING; NITROGEN; REFRACTIVE INDEX;

ELECTRIC PROPERTIES;

EID: 0037103668     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1489499     Document Type: Article

References (5)

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5. C. H. Bjorkman, J. T. Fitch, and G. Lucovsky, Appl. Phys. Lett. 56, 1983 (1990). apl APPLAB 0003-6951