Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Solid-State Electronics

Volumn 47, Issue 1, 2003, Pages 71-76

  Lee, Yi Mu ^a   Wu, Yider ^b   Bae, Choelhwyi ^a   Hong, Joon Goo ^a   Lucovsky, Gerald ^a,c  

^a North Carolina State University   (United States)

^b M/S 143 ^*  (United States)

^c NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

Constant voltage stress; Dielectric degradation; Hard breakdown; RPECVD oxide nitride dielectric; Soft breakdown; Stress induced leakage current

Indexed keywords

ELECTRIC BREAKDOWN; HOLE TRAPS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; NITRIDES; NITRIDING; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRESS ANALYSIS; THRESHOLD VOLTAGE;

GATE DIELECTRICS; VOLTAGE STRESS;

DIELECTRIC MATERIALS;

EID: 0037211182     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00257-5     Document Type: Article

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