On the influence of indium addition on the mechanical properties of gallium arsenide at room temperature

EPJ Applied Physics

Volumn 1, Issue 2, 1998, Pages 141-146

  Koubaiti S ^a,c   Levade, C ^a   Couderc, J J ^b   Vanderschaeve, G ^a  

^a CEMES CNRS   (France)

^b INSA   (France)

^c IBN TOFAIL UNIVERSITY   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; CRYSTALS; DEFORMATION; DISLOCATIONS (CRYSTALS); INDIUM; INFRARED RADIATION; PLASTICITY; RADIATION EFFECTS;

VICKERS HARDNESS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0031703402     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1998129     Document Type: Article

References (27)

1. N. Burle-Durbec, B. Pichaud, F. Minari, Philos. Mag. Lett. 56, 173 (1987).
2. I. Yonenaga, K. Sumino, J. Appl. Phys. 62, 1212 (1987).
3. Y. Androussi, G. Vanderschaeve, A. Lefebvre, Philos. Mag. A 59, 1189 (1989).
4. S.W. Lee, J.H. Ahn, S. Danyluk, A.G. Elliot, J. Appl. Phys. 68, 4276 (1990).
5. S. Guruswamy, J.P. Hirth, K.T. Faber, J. Appl. Phys. 60, 4136 (1986).
6. M.G. Tabache, E.D. Bourret, A.G. Elliot, Appl. Phys. Lett. 49, 289 (1986).
7. H.M. Hobgood, S. Mc Guigan, J.A. Spitznagel, R.N. Thomas, Appl. Phys. Lett. 48, 1654 (1986).
8. K. Yasutake, Y. Konishi, K. Adachi, K. Yoshii, M. Umeno, H. Kawabe, Jap. J. Appl. Phys. 27, 2238 (1988).
9. M. Matsui, T. Yokoyama, Inst. Phys. Conf. Ser. 79, 13 (1986).
10. S. Koubaïti, C. Levade, G. Vanderschaeve, J.J. Couderc, Philos. Mag. A (submitted)
11. D.B. Holt, J. Mat. Sci. 23, 1131 (1988).
12. M. Yoshioka, J. Appl. Phys. 76, 7790 (1994).
13. S. Koubaïti, Ph.D. thesis, Toulouse, 1996; S. Koubaïti, J.J. Couderc, C. Levade, G. Vanderschaeve, Vickers indentation on the {001} faces of GaAs under IR illumination and in darkness. Dislocation microstructure around the indents (in preparation).
14. S. Koubaïti, Ph.D. thesis, Toulouse, 1996; S. Koubaïti, J.J. Couderc, C. Levade, G. Vanderschaeve, Vickers indentation on the {001} faces of GaAs under IR illumination and in darkness. Dislocation microstructure around the indents (in preparation).
15. S. Koubaïti, J.J. Couderc, C. Levade, G. Vanderschaeve, Inst. Phys. Conf. Ser. 157, 107 (1997).
16. S.G. Roberts, P.D. Warren, P.B. Hirsch, J. Mater. Res. 1, 162 (1986).
17. I. Zongo, Ph.D. thesis, Lille, 1990.
18. F.A. Mc Clintock, A.S. Argon, Mechanical Behaviour of Materials (Addison-Wesley, Reading, 1966) pp. 443-470.
19. K. Wessel, H. Alexander, Philos. Mag A 35, 1523 (1977).
20. P. Pirouz, Deformation twinning in bulk and thin film semiconductors, Twinning in Advanced Materials Pittsburg 18-20 October 1993, edited by M.H. Yoo and M. Wuttig (TMS 1994) pp. 275-295.
21. X.J. Xing, T. Pérez, P. Pirouz, Philos. Mag. A 72, 837 (1995).
22. F. Louchet, J. Phys. France 49, 1219 (1988).
23. N. Burle-Durbec, B. Pichaud, F. Minari, Philos. Mag. A 59, 121 (1989).
24. B.E. Mdivanyan, M.Sh. Shikhsaidov, Phys. Stat. Sol. (a) 107, 131 (1988).
25. K. Maeda, S. Takeuchi, Doping effect and radiation enhanced dislocation glide in GaAs, Dislocations in Solids (Yamada Science Foundation 1985) pp. 433-436
26. K. Maeda, S. Takeuchi, J. Phys. 44 C4, 375 (1983).
27. J.D. Weeks, J.D. Tully, L.C. Kimerling, Phys. Rev. B 12, 3286 (1975).