Dislocation structure in low-angle interfaces between bonded Si(001) wafers

Journal of Materials Science

Volumn 39, Issue 9, 2004, Pages 3031-3039

  Akatsu, T ^a,b   Scholz, R ^a   Gosele U ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRIC INSULATORS; ELECTRON DIFFRACTION; HEAT TREATMENT; TRANSMISSION ELECTRON MICROSCOPY; VACUUM;

MEMS; ROTATIONAL MISORIENTATION; WAFER BONDING; WB INTERFACES;

SILICON WAFERS;

EID: 3543068926     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000025829.40338.04     Document Type: Article

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