High Purity Isotopically Enriched 29Si and 30Si Single Crystals: Isotope Separation, Purification, and Growth

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 10, 2003, Pages 6248-6251

  Itoh, Kohei M ^a   Kato, Jiro ^a   Uemura, Masafumi ^a   Kaliteevskii, Alexey K ^b   Godisov, Oleg N ^b   Devyatych, Grigori G ^c   Bulanov, Andrey D ^c   Gusev, Anatoli V ^c   Kovalev, Igor D ^c   Sennikov, Pyotr G ^c   Pohl, Hans J ^d   Abrosimov, Nikolai V ^e   Riemann, Helge ^e  

^a KEIO UNIVERSITY   (Japan)

^b Sci/Tech Ctr Centrotech ECP E P   (Russian Federation)

^c INSTITUTE OF CHEMISTRY OF HIGH PURITY SUBSTANCES   (Russian Federation)

^d VITCON Projectconsult GmbH   (Germany)

^e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Bulk crystal growth; Hall effect; Isotope; Silicon

Indexed keywords

CRYSTAL GROWTH; HALL EFFECT; IMPURITIES; ISOTOPES; MASS SPECTROMETRY; PURIFICATION; SEPARATION; SINGLE CRYSTALS; THERMAL EXPANSION;

DECORATION ETCHING; QUANTUM COMPUTERS;

SILICON;

EID: 0347527236     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.6248     Document Type: Article

References (52)

1. K. Itoh, W. L. Hansen, E. E. Haller, J. W. Farmer, V. I. Ozhogin, A. Rudnev and A. Tikhomirov: J. Mater. Res. 8 (1993) 1341.
2. W. F. Banholzer and T. R. Anthony: Thin Solid Films 212 (1992) 1.
3. A. T. Collins, S. C. Lawson, G. Davies and H. Kanda: Phys. Rev. Lett. 65 (1988) 891.
4. E. E. Haller: J. Appl. Phys. 77 (1995) 2857.
5. P. Etchegoin, H. D. Fuchs, J. Weber, M. Cardona, L. Pintschovius, K. Itoh and E. E. Haller: Phys. Rev. B 48 (1993) 12661.
6. H. D. Fuchs, P. Etchegoin, M. Cardona, K. Itoh and E. E. Haller: Phys. Rev. Lett. 70 (1993) 1715.
7. A. Göbel, D. T. Wang, M. Cardona, L. Pintschovius, W. Reichardt, J. Kulda, N. Pyka, E. E. Haller and K. Itoh: Phys. Rev. B 58 (1998) 10510.
8. V. I. Ozhogin, A. V. Inyushikin, A. V. Tikhomirov, G. E. Popov, E. Haller and K. Itoh: JETP Lett. 63 (1996) 490 [Pis'ma Zh. Eksp. Teor. Fiz. 63 (1996) 463].
9. V. I. Ozhogin, A. V. Inyushikin, A. V. Tikhomirov, G. E. Popov, E. Haller and K. Itoh: JETP Lett. 63 (1996) 490 [Pis'ma Zh. Eksp. Teor. Fiz. 63 (1996) 463].
10. M. Asen-Palmer, K. Bartowski, E. Gmelin, M. Cardona, A. P. Zhernov, V. Ozhogin, A. Inyushikin, A. Taldenkov, K. Itoh and E. E. Haller: Phys. Rev. 856 (1997) 9431.
11. V. I. Ozhogin, N. A. Babushikina, L. M. Belova, A. P. Zhernov, E. E. Haller and K. M. Itoh: JETP 88 (1999) 135.
12. G. Davies, E. C. Lightowlers, T. S. Hui, V. Ozhogin, K. M. Itoh, W. L. Hansen and E. E. Haller: Semicond. Sci. Technol. 8 (1993) 2201.
13. C. Parks, A. K. Ramdas, S. Rodriguez, K. M. Itoh and E. E. Haller: Phys. Rev. B 49 (1994) 14244.
14. K. M. Itoh, W. L. Hansen, J. W. Beeman, E. E. Haller, J. W. Farmer, A. Rudnev, A. Tikhomirov and V. I. Ozhogin: Appl. Phys. Lett. 64 (1994) 2121.
15. K. M. Itoh, T. Kinoshita, W. Walukiewicz, J. W. Beeman, E. E. Haller, J. Muto, J. W. Farmer and V. I. Ozhogin: Mater. Sci. Forum 258&263 (1997) 77.
16. K. M. Itoh, W. Walukiewicz, H. D. Fuchs, J. W. Beeman, E. E. Haller, J. W. Farmer and V. I. Ozhogin: Phys. Rev. B 50 (1994) 16995.
17. K. M. Itoh: Phys. Status Solidi B 218 (2000) 211.
18. K. M. Itoh, E. E. Haller, J. W. Beeman, W. L. Hansen, L. A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J. W. Farmer and V. I. Ozhogin: Phys. Rev. Lett. 77 (1996) 4058.
19. M. Watanabe, K. M. Itoh, Y. Ootuka and E. E. Haller: Phys. Rev. B 60 (1999) 15817.
20. M. Watanabe, K. M. Itoh, Y. Ootuka and E. E. Haller: Phys. Rev. B 62 (2000) R2255.
21. H. D. Fuchs, W. Walukiewicz, E. E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A. I. Rudnev, A. V. Tikhomirov and V. I. Ozhogin: Phys. Rev. B 51 (1995) 16817.
22. E. Silveira, W. Dondl, G. Abstreiter and E. E. Haller: Phys. Rev. B 56 (1997) 2062.
23. J. Spitzer, T. Ruf, M. Cardona, W. Dondl, R. Shorer, G. Abstreiter and E. E. Haller: Phys. Rev. Lett. 72 (1994) 1565.
24. K. Morita, K. M. Itoh, J. Muto, K. Mizoguchi, N. Usami, Y. Shiraki and E. E. Haller: Thin Solid Films 369 (2000) 405.
25. M. Nakajima, H. Harima, K. Morita, K. M. Itoh, K. Mizoguchi and E. E. Haller: Phys. Rev. B 63 (2001) 161304R.
26. A. V. Kolobov, K. Morita, K. M. Itoh and E. E. Haller: Appl. Phys. Lett. 81 (2002) 3855.
27. K. Takyu, K. M. Itoh, K. Oka, N. Saito and V. I. Ozhogin: Jpn. J. Appl. Phys. 38 (1999) L1493.
28. A. D. Bulanov, G. G. Devyatych, A. V. Gusev, P. G. Sennikov, H.-J. Pohl, H. Riemann, H. Schilling and P. Becker: Cryst. Res. Technol. 35 (2000) 1023.
29. P. Becker et al: IEEE Trans. Instrum. Meas. 44 (1995) 522.
30. D. Karaiskaj, M. L. W. Thewalt, T. Ruf, M. Cardona, H.-J. Pohl, G. G. Deviatych, P. G. Sennikov and H. Riemann: Phys. Rev. Lett. 86 (2001) 6010.
31. D. Karaislaj, M. L. W. Thewalt, T. Ruf, M. Cardona and M. Konuma: submitted to Phys. Rev. Lett.
32. D. Karaiskaj, M. L. W. Thewalt, T. Ruf, M. Cardona and M. Konuma: Phys. Rev. Lett. 89 (2002) 016401.
33. W. S. Capinski, H. J. Maris, E. Bauser, I. Silier, M. Asen-Palmer, T. Ruf, M. Cardona and E. Gmelin: Appl. Phys. Lett. 71 (1997) 2109.
34. T. Ruf, R. W. Henn, M. Asen-Palmer, E. Gmelin, M. Cardona, H.-J. Pohl, G. G. Devyatych and P. G. Sennikov: Solid State Commun. 115 (2000) 243.
35. A. V. Gusev, A. M. Gibin, O. N. Morozkin, V. A. Gavva and A. V. Mitin: Inorg. Mater. 38 (2002) 1305.
36. There has been an active debate on how much isotope effect one should expect for the thermal conductivity of Si above T > 200 K. The theoretical analysis of A. V. Inyushkin [Inorg. Mater. 38 (2002) 427] supports the experimental results of ref. 33 rather than those of ref. 31 and ref. 32.
37. H. Bracht, E. E. Haller and R. Clark-Phelps: Phys. Rev. Lett. 81 (1998) 393.
38. A. Ural, P. B. Griffin and J. D. Plummer: Phys. Rev. Lett. 83 (1998) 3454.
39. H. Bracht and E. E. Haller: Phys. Rev. Lett. 85 (2000) 4835.
40. A. Ural, P. B. Griffin and J. D. Plummer: Phys. Rev. Lett. 85 (2000) 4836.
41. T. Takahashi, S. Fukatsu, K. M. Itoh, M. Uematsu, A. Fujiwara, H. Kageshima, Y. Takahashi and K, Shiraishi: J. Appl. Phys. 93 (2003) 3674.
42. K. Fujii, A. Waseda and N. Kuramoto: Meas. Sci. Technol. 12 (2001) 2031.
43. B. E. Kane: Nature 393 (1998) 133.
44. T. D. Ladd, J. R. Goldman, F. Yamaguchi, Y. Yamamoto, E. Abe and K. M. Itoh: Phys. Rev. Lett. 89 (2002) 017901.
45. 30Si isotope engineering has been realized for thin films grown by liquid phase epitaxy: F. Widulle, T. Ruf, M Konuma, I. Silier, M. Cardona, W. Kriegseis and V. I. Ozhogin: Solid State Commun. 118 (2001) 1.
46. V. G. Sergeev, A. K. Kaliteevski, O. N. Godisov and R. D. Smirnov: Proc. 5th Int. Symp. on the Synthesis and Applications of Isotopes and Isotopically Labeled Compounds, eds. J. Alien and R. Voges (John Wiley & Sons, London, 1995).
47. A. K. Kaliteevski, O. N. Godisov and V. V. Kuraev: Proc. 6th Int. Symp. on the Synthesis and Applications of Isotopes and Isotopically Labeled Compounds, eds. I R. Heys and D. G. Melillo (John Wiley & Sons, London, 1998) p. 683.
48. K. Hoshikawa and X. Xuang: Properties of Crystalline Silicon, ed. R. Hull (INSPEC, London, 1999) p. 23.
49. G. G. Devyatych, A. D. Bulanov, A. V. Gusev, P. G. Sennikov, A. M. Prochorov, E. M. Dianov and H.-J. Pohl: Proc. Russian Academy of Sciences (Chemistry) 376 (2001) 492.
50. I. D. Kovalev, K. N. Malyshev, A. M. Potapov and A. I. Suchkov: Russ. J. Analy. Chem. 56 (2001) 496.
51. J. S. Blakemore: Semiconductor Statistics (Dover, New York, 1987) p. 138.
52. Sh. M. Kogan and T. M. Lifshits: Phys. Status Solidi A 39 (1977) 11.