Metal-insulator transition of isotopically enriched neutron-transmutation-doped (formula presented) in magnetic fields

Physical Review B - Condensed Matter and Materials Physics

Volumn 60, Issue 23, 1999, Pages 15817-15823

  Haller, E ^c  

^a KEIO UNIVERSITY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000151864     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.15817     Document Type: Article

References (27)

1. For a review, see P A. Lee and T V. Ramakrishnan, Rev. Mod. Phys.57, 287 (1985).
2. For a review, see D. Belitz and T R. Kirkpatrick, Rev. Mod. Phys.66, 261 (1994).
3. T. F. Rosenbaum, R F. Milligan, M A. Paalanen, G A. Thomas, R N. Bhatt, and W. Lin, Phys. Rev. B27, 7509 (1983).
4. W. N. Shafarman, D W. Koon, and T G. Castner, Phys. Rev. B40, 1216 (1989).
5. A. P. Long and M. Pepper, J. Phys. C17, L425 (1984).
6. A. N. Ionov, M J. Lea, and R. Rentzsch, Pis’ma Zh. Éksp. Teor. Fiz. 54, 470 (1991) [JETP Lett.54, 473 (1991)].
7. K. M. Itoh, E E. Haller, J W. Beeman, W L. Hansen, J. Emes, L A. Reichertz, E. Kreysa, T. Shutt, A. Cummings, W. Stockwell, B. Sadoulet, J. Muto, J W. Farmer, and V I. Ozhogin, Phys. Rev. Lett.77, 4058 (1996).
8. M. Watanabe, Y. Ootuka, K M. Itoh, and E E. Haller, Phys. Rev. B58, 9851 (1998).
9. A. MacKinnon and B. Kramer, Phys. Rev. Lett.47, 1546 (1981).
10. K. Slevin and T. Ohtsuki, Phys. Rev. Lett.78, 4085 (1997).
11. J. Chayes, L. Chayes, D S. Fisher, and T. Spencer, Phys. Rev. Lett.57, 2999 (1986).
12. For a theoretical attempt to show that (formula presented) can be less than (formula presented) in three dimensions, see, for example, F. Pázmándi, R T. Scalettar, and G T. Zimányi, Phys. Rev. Lett.79, 5130 (1997).
13. F. J. Wegner, Z. Phys. B25, 327 (1976);
14. Z. Phys. BF J. Wegner 35, 207 (1979).
15. T. R. Kirkpatrick and D. Belitz, Phys. Rev. Lett.70, 974 (1993).
16. Y. Ootuka, H. Matsuoka, and S. Kobayashi, in Anderson Localization, edited by T. Ando and H. Fukuyama (Springer-Verlag, Berlin, 1988), p. 40.
17. T. F. Rosenbaum, S B. Field, and R N. Bhatt, Europhys. Lett.10, 269 (1989).
18. P. Dai, Y. Zhang, and M P. Sarachik, Phys. Rev. B45, 3984 (1992).
19. P. Dai, Y. Zhang, S. Bogdanovich, and M P. Sarachik, Phys. Rev. B48, 4941 (1993).
20. S. Bogdanovich, P. Dai, M P. Sarachik, V. Dobrosavljevic, and G. Kotliar, Phys. Rev. B55, 4215 (1997).
21. E. E. Haller, N P. Palaio, M. Rodder, W L. Hansen, and E. Kreysa, in Proceedings of the 4th International Conference on Neutron Transmutation Doping of Semiconductor Materials, edited by R. D. Larrabee (Plenum, New York, 1984), pp. 21–36.
22. I. S. Park and E E. Haller, J. Appl. Phys.64, 6775 (1988).
23. E. E. Haller, Semicond. Sci. Technol.5, 319 (1990).
24. K. Itoh, W L. Hansen, E E. Haller, J W. Farmer, and V I. Ozhogin, in Proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, edited by T. Taguchi [Mater. Sci. Forum117 & 118, 117 (1993)].
25. See, for example, F. Shimura, Semiconductor Silicon Crystal Technology (Academic Press, San Diego, 1988), pp. 159–161.
26. C. Kittel, Introduction to Solid State Physics, 6th ed. (John Wiley & Sons, New York, 1986), Chap. 8.
27. D. E. Khmel’nitskii and A I. Larkin, Solid State Commun.39, 1069 (1981).