Localization length and impurity dielectric susceptibility in the critical regime of the metal-insulator transition in homogeneously doped p-type Ge

Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 4, 2000, Pages R2255-R2258

  Watanabe, Michio ^a   Itoh, Kohei M ^a   Ootuka, Youiti ^a   Haller, Eugene E ^a  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347934267     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.62.R2255     Document Type: Article

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