Highly isotopic enriched (99.9%), high-pure 28Si single crystal

Crystal Research and Technology

Volumn 35, Issue 9, 2000, Pages 1023-1026

  Bulanov, A D ^a   Devyatych, G G ^a   Gusev, A V ^a   Sennikov, P G ^a   Pohl, H J ^b   Riemann, H ^c   Schilling, H ^c   Becker, P ^d  

^a INSTITUTE OF CHEMISTRY OF HIGH PURITY SUBSTANCES   (Russian Federation)

^b VITCON Projectconsult GmbH   (Germany)

^c LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^d PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; MASS TRANSFER; SILICON;

SEMICONDUCTOR CRYSTALS; SPARK-MASS-SPECTRAL METHODS;

SINGLE CRYSTALS;

EID: 0034548031     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-4079(200009)35:9<1023::AID-CRAT1023>3.0.CO;2-V     Document Type: Article

References (8)

1. ASEN-PALMER, M., BARTKOWSKI, K., GMELIN, E., CARDONA, M., ZHERNOV, A. P., ILYUSHKIN, A. V., TALDENKOV, A., OZOGIN, V. I., ITOH, K. M., HALLER, E. E.: Phys. Rev B. 56 (1997) 9431
2. BECKER et. al.: IEEE Trans. Instr. Meas. 44 (1955) 522
3. CAPINSKI W.S., MARIS, H.J., BAUSER, E., SILIER, I., ASEN-PALMER, M., RUF, T., CARDONA, M., GMELIN, E.: Appl. Phys. Lett. 71 (1997) 2109
4. HALLER, E. E.: J. Appl. Phys. 77 (1995) 2857
5. RÖTTGER, S., PAUL, A., KEYSER, U.: IEEE Trans. Instr. Meas. 46 (1997) 560
6. RUF, T., HENN, R. W., ASEN-PALMER, M., GMELIN, E., CARDONA, M., POHL, H.-J., DEVYATYCH, G. G., SENNIKOV, P .G.: Solid State Comm. 115 (2000) 243-247
7. SLACK, G. A.: J. Phys. Chem. Solids 34 (1973) 321
8. TAKYU, K., ITOH, K. M. et. al.: Jpn. J. Appl. Phys. 38 (1999) L1493-L1496